| PART |
Description |
Maker |
| W9751G6KB |
8M ?4 BANKS ?16 BIT DDR2 SDRAM
|
Winbond
|
| W9751G8JB |
16M X 4 BANKS X 8 BIT DDR2 SDRAM
|
Winbond
|
| W971GG8JB |
16M × 8 BANKS × 8 BIT DDR2 SDRAM
|
Winbond
|
| W972GG8JB-3 W972GG8JB25I |
32M x 8 BANKS x 8 BIT DDR2 SDRAM
|
Winbond
|
| W971GG8KB-25-TR |
16M 8 BANKS 8 BIT DDR2 SDRAM
|
Winbond
|
| W9751G8JB W9751G8JB-3 |
16M ?4 BANKS ?8 BIT DDR2 SDRAM
DDR DRAM, PBGA84
|
Winbond
WINBOND ELECTRONICS CORP
|
| W982516BH-75 W982516BH-75I W982516BH-75L |
Industrial SDRAM
Low Power SDRAM
4M X 4 BANKS X 16 BIT SDRAM
|
Winbond Electronics
|
| EDE1104ABSE-5C-E EDE1108ABSE-5C-E EDE1116ABSE-5C-E |
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.6 ns, PBGA68
1G bits DDR2 SDRAM 64M X 16 DDR DRAM, 0.45 ns, PBGA92
1G bits DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1G bits DDR2 SDRAM 1克位DDR2 SDRAM内存
|
Elpida Memory, Inc.
|
| W982508AH |
8M X 4 BANKS X 8 BIT SDRAM
|
WINBOND[Winbond]
|
| W982516BH W982516BH-7 W982516BH-75 W982516BH75I W9 |
4M X 4 BANKS X 16 BIT SDRAM
|
WINBOND[Winbond]
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
